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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/6897

Title: A systematic dry etching process for profile control of quantum dots and nanoconstrictions
Authors: Madnarski, Sutikno
Uda, Hashim
Zul Azhar, Zahid Jamal
Keywords: Dry etch process;Nanostructure dimension;Quantum electronics;Nanostructured materials;Nanotechnology;Quantum dot;Silicon;Nanostructures
Issue Date: Aug-2007
Publisher: Elsevier B.V.
Citation: Microelectronics Journal, vol.38 (8-9), 2007, pages 823-827.
Abstract: In essence, quantum dot dimensions and others can be laterally and vertically defined by using either bottom up or top down methods respectively. In fabrication that uses top down method, etch process hold a chief role. Varieties of etch times and oxygen flow rates in ranges 75-88 s and 20-50 sccm, respectively, were devised to fabricate optimum dimension of nanostructure. As a result, as etch time increased, lateral etch rate of silicon quantum dot, source and drain and also the nanostructure etch depth increased. However, high roughness of etched silicon surface profile led to concave surfaces of source and drain. In this research, no significant relation between quantum dot diameters and oxygen flow rates was found. There was a reflection point, fixed data dot of 26 sccm, of the decreasing and increasing lines of relation between nanostructure depth of etched silicon and nanostructure gradient with the O2 flow rate.
Description: Link to publisher's homepage at www.elsevier.com
URI: http://www.sciencedirect.com/science/journal/00262692
http://hdl.handle.net/123456789/6897
ISSN: 0959-8324
Appears in Collections:School of Mechatronic Engineering (Articles)
Zul Azhar Zahid Jamal, Prof. Dr.
Uda Hashim, Prof. Dr.

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