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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/6893

Title: Reproducibility of silicon single electron quantum dot transistor
Authors: Uda, Hashim
Sutikno, Madnarski
Keywords: Coulomb blockade oscillation;Design of SET;Quantum dot;Reproducibility;Single electron transistor;Transistors;Transistors -- Design and construction
Issue Date: 2006
Publisher: Nano Science and Technology Institute
Citation: Technical Proceedings 3, p.35-38
Series/Report no.: Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006
Abstract: In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET based on the kind of conducting material between gate and island, which consists of resistive-SET and capacitive SET. There are about 18 types of SET designs have previously published by many researchers. This paper describes each SET design of 18 all in the reproducibly design point of view at most the form of source-drain contact junction, layers structure, and the modification of fabrication technology. The reproducibility of single electron transistor can be observed from the equity of design, dimension and device characteristics. Indeed, the forms of SET source-drain contact junction have very large influences on the difficulties level of fabrication processes and electrical characteristics.
Description: Link to publisher's homepage at http://www.nsti.org/Nanotech2006/
URI: http://www.nsti.org/Nanotech2006/
http://hdl.handle.net/123456789/6893
Appears in Collections:School of Microelectronic Engineering (Articles)
Uda Hashim, Prof. Dr.

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