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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/6889

Title: Borophosphosilicate glass (BPSG) reflow characterization for submicron CMOS technology
Authors: Uda, Hashim
Ramzan, Mat Ayub
Nik Hazura, Nik Hamat
Keywords: Borophosphosilicate glass
Hydrofluoric acid staining
Steam annealing
Microelectronics -- Materials
Integrated circuits -- Materials
Metal oxide semiconductors, Complementary
Issue Date: 2007
Publisher: Universiti Kebangsaan Malaysia
Citation: Sains Malaysiana, vol.36 (1), 2007, pages 53-57.
Abstract: This paper involves the planarization of borophosphosilicate glass (BPSG) film using a new recipe for annealing process to improve the borophosphosilicate glass (BPSG) film flatness after reflow. This improvement is for 0.35μm technology using steam annealing method at different temperatures. This process allows the planarization of wafers with thin layer at its surface. In this paper we present the comparison between the effect of hydrofluoric acid (HF) staining on the cross sectional topography with the samples without hydrofluoric acid (HF) staining analyzed by field emission scanning electron microscopy (FESEM). We found that staining with HF produced clearer images.
Description: Link to publisher's homepage at http://pkukmweb.ukm.my/~jsm/
URI: http://pkukmweb.ukm.my/~jsm/
http://hdl.handle.net/123456789/6889
ISSN: 0126-6039
Appears in Collections:Uda Hashim, Prof. Dr.
School of Microelectronic Engineering (Articles)

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