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|Title: ||Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process|
|Authors: ||Sutikno, Madnasri|
Zul Azhar, Zahid Jamal
|Keywords: ||Silicon dioxide;Quantum dots;Transistors;Oxidation;Quantum electronics;Semiconductors|
|Issue Date: ||29-Jan-2008|
|Publisher: ||IOP Publishing Ltd|
|Citation: ||Nanotechnology, vol.19 (7), 2008, pages 1-6.|
|Abstract: ||The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using a systematic oxidation technique known as the pattern-dependent oxidation (PADOX) process. For comparison, two oxidation processes using conventional furnace and rapid thermal processing (RTP) were used. The oxidation temperature for both oxidation processes was set at 1000°C and the oxygen flow rate in the furnace was set at 1 l min-1. The nanostructures were characterized using AFM, SEM and TEM to determine the quality and the stoichiometry of the Si QDs and the oxides. The oxidation rate using a furnace is 0.36 nm s-1, significantly lower than the RTP value which is 2.16 nm s-1. Meanwhile, the oxygen contents in SiO2 grown by furnace and RTP are approximately the same.|
|Description: ||Link to publisher's homepage at http://iopscience.iop.org|
|Appears in Collections:||School of Microelectronic Engineering (Articles)|
Zul Azhar Zahid Jamal, Prof. Dr.
Uda Hashim, Prof. Dr.
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