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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/6699

Title: Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
Authors: Sutikno, Madnasri
Uda, Hashim
Zul Azhar, Zahid Jamal
Keywords: Silicon dioxide;Quantum dots;Transistors;Oxidation;Quantum electronics;Semiconductors
Issue Date: 29-Jan-2008
Publisher: IOP Publishing Ltd
Citation: Nanotechnology, vol.19 (7), 2008, pages 1-6.
Abstract: The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using a systematic oxidation technique known as the pattern-dependent oxidation (PADOX) process. For comparison, two oxidation processes using conventional furnace and rapid thermal processing (RTP) were used. The oxidation temperature for both oxidation processes was set at 1000°C and the oxygen flow rate in the furnace was set at 1 l min-1. The nanostructures were characterized using AFM, SEM and TEM to determine the quality and the stoichiometry of the Si QDs and the oxides. The oxidation rate using a furnace is 0.36 nm s-1, significantly lower than the RTP value which is 2.16 nm s-1. Meanwhile, the oxygen contents in SiO2 grown by furnace and RTP are approximately the same.
Description: Link to publisher's homepage at http://iopscience.iop.org
URI: http://iopscience.iop.org/0957-4484/19/7/075302/?ejredirect=.iopscience
http://hdl.handle.net/123456789/6699
ISSN: 0957-4484
Appears in Collections:School of Microelectronic Engineering (Articles)
Zul Azhar Zahid Jamal, Prof. Dr.
Uda Hashim, Prof. Dr.

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