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|Title: ||Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD|
|Authors: ||Arsyad, F. S.|
Zul Azhar, Zahid Jamal
|Keywords: ||Aluminium compounds;Atomic force microscopy;Semiconductor quantum dots;Silicon;Wide band gap semiconductors;PA-MOCVD;GaN Quantum Dot;[(C2H5)4]Si;Deposition|
|Issue Date: ||Jul-2006|
|Publisher: ||Institute of Electrical and Electronics Engineering (IEEE)|
|Series/Report no.: ||Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology (ICONN 2006)|
|Abstract: ||Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by atomic force microscope (AFM). The typical average density of the dots is around 4 × 109 cm-2, while the diameter and the height of the dots are approximately 100 and 50 nm, respectively. The density and the size of the dots significantly depend on the dose of TESi. It is found that the growth mode was changed from the two-dimensional step-flow to the three-dimensional island formation by modifying the AlGaN surface energy induced by the deposited Si.|
|Description: ||Link to publisher's homepage at http://ieeexplore.ieee.org|
|Appears in Collections:||School of Microelectronic Engineering (Articles)|
Zul Azhar Zahid Jamal, Prof. Dr.
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