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Title: GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
Authors: Chuah, Lee Siang
Z., Hassan
H., Abu Hassan
Naser Mahmoud, Ahmed
Keywords: AlN;GaN;Photodiode;Schottky barrier height;Thermal annealing;Films;Semiconductors -- Materials;Gallium nitride
Issue Date: Jul-2009
Publisher: Elsevier B.V.
Citation: Journal of Alloys and Compounds, vol.481 (1-2), 2009, pages L15-L19
Abstract: In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted molecular beam epitaxy (PAMBE) with AlN (about 200 nm) as the buffer layer. Finally, a thin AlN cap layer (50 nm) was grown on the GaN surface. Current-voltage (I-V) measurements before and after heat treatment were carried out. Different annealing temperatures (500-700 °C) were investigated. Under dark condition, the Schottky barrier height (SBH) derived by the I-V method is 0.48 eV for as-deposited Ni/AlN/GaN/AlN Schottky diode. On the other hand, the effective barrier heights of 0.52, 0.55, and 0.57 eV were obtained for Schottky diodes annealed at 500, 600, and 700 °C, respectively. We found that the SBHs of annealed Schottky diodes under dark and illuminated conditions were observed to be higher relative to the as-deposited Schottky diode. When annealed at 700 °C, the resulting Schottky diodes show a dark current of as low as 5.05 × 10-5 A at 10 V bias, which is about two orders of magnitude lower than that of as-deposited Ni/AlN/GaN/AlN Schottky diode (2.37 × 10-3 A at 10 V bias). When the sample was under illumination condition, the change of current was significant for the annealed samples as compared to the as-deposited sample.
Description: Link to publisher's homepage at http://www.elsevier.com/wps/find/homepage.cws_home
URI: http://www.sciencedirect.com/science/journal/09258388
ISSN: 0925-8388
Appears in Collections:School of Microelectronic Engineering (Articles)

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