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International Journal of Nanoelectronics and Materials >
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http://hdl.handle.net/123456789/5341
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| Title: | Studying the different effects of gamma and x-ray irradiation on the electrical properties of silicon diode type 1N1405 |
| Authors: | Najim, Jassim M. |
| Keywords: | Gamma rays
Bias voltage
Silicon
X-rays
Electric radiation
Radiation
Radiation -- Measurement |
| Issue Date: | 2009 |
| Publisher: | Universiti Malaysia Perlis |
| Citation: | International Journal of Nanoelectronics and Materials, vol. 2 (1), 2009, pages 41-46. |
| Abstract: | The silicon diode types 1N1405 subjected to different types of radiation like (x-ray and y-radiation), it is measured by the foward and reverse bias voltage before and after irradiation, so this research study the different effect of two types of radiation on electrical properties of the diode. |
| Description: | Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008 & vol. 2; issue 1, 2009. |
| URI: | http://hdl.handle.net/123456789/5341
http://www.unimap.edu.my |
| ISSN: | 1985-5761 (Printed)
1997-4434 (Online) |
| Appears in Collections: | International Journal of Nanoelectronics and Materials
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