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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/5341

Title: Studying the different effects of gamma and x-ray irradiation on the electrical properties of silicon diode type 1N1405
Authors: Najim, Jassim M.
Keywords: Gamma rays;Bias voltage;Silicon;X-rays;Electric radiation;Radiation;Radiation -- Measurement
Issue Date: 2009
Publisher: Universiti Malaysia Perlis
Citation: International Journal of Nanoelectronics and Materials, vol. 2 (1), 2009, pages 41-46.
Abstract: The silicon diode types 1N1405 subjected to different types of radiation like (x-ray and y-radiation), it is measured by the foward and reverse bias voltage before and after irradiation, so this research study the different effect of two types of radiation on electrical properties of the diode.
Description: Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008 & vol. 2; issue 1, 2009.
URI: http://hdl.handle.net/123456789/5341
http://www.unimap.edu.my
ISSN: 1985-5761 (Printed)
1997-4434 (Online)
Appears in Collections:International Journal of Nanoelectronics and Materials

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