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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/5337

Title: Electrical and structural properties of flash evaporation InSb thin films
Authors: Al-Ani, S.K.J.
Obaid, Y.N.
Kasim, S.J.
Mahdi, M.A.
Keywords: InSb thin films;Flash evaporation;X-ray diffraction;Hall Effect;Electrical conductivity;Indium antimonide;Electric conductivity -- Measurement;Thin films
Issue Date: 2009
Publisher: Universiti Malaysia Perlis
Citation: International Journal of Nanoelectronics and Materials, vol. 2 (1), 2009, pages 99-109.
Abstract: Indium antimonide (InSb) thin films were prepared on glass substrates by flash evaporation technique of a stoichiometric bulk of InSb at different substrate temperatures Ts= (300,320,350)°C. Films thickness were in the range of t= (0.2 -0.6) µm. X-ray diffraction patterns on InSb powder and thin films were given. The patterns showed that all films were stoichiometric and the crytallinity degree was improved with increasing of the substrate temperature and film thickness. The Hall effect measurements at room temperature showed that all films have n-type conductivity except the film of 0.2 µm thickness prepared at Ts=350 °C was p-type conductivity. The electrical cnductivity was studied in temperature range (25-200) °C and it was decreased with increased the substrate temperature for all samples. The carrier's mobility at room temperature was found to be increased with film thickness and substrate temperature.
Description: Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008 & vol. 2; issue 1, 2009.
URI: http://hdl.handle.net/123456789/5337
http://www.unimap.edu.my
ISSN: 1985-5761 (Printed)
1997-4434 (Online)
Appears in Collections:International Journal of Nanoelectronics and Materials

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