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|Title: ||Theoretical prediction of equation of state for semiconductors|
|Authors: ||Pande, Brijesh K.|
Rai, H. K.
Pande, Anjani K.
Singh, Chandra K.
|Keywords: ||Semiconductors;Compression;Equation of State|
|Issue Date: ||2016|
|Publisher: ||Universiti Malaysia Perlis|
|Citation: ||International Journal of Nanoelectronics and Materials, vol.9, 2016, pages 173-182|
|Abstract: ||The isothermal EOS provides a powerful tool for theoretical prediction of different
thermo elastic properties at extreme compressions. In the present work an attempt has been made for theoretical computation of pressure dependence of compression for different semi conducting materials viz. FeSi2, SnS, , AlN, GaN, MoN, .For this computation four different isothermal EOS viz. Tait EOS , Murnaghan EOS, Shanker EOS, and Suzuki EOS are used . The obtained results are compared with available experimental data which reveals that Murnaghan EOS is best suited for theoretical prediction of compression for semiconductors at different pressure ranges.|
|Description: ||Link to publisher's homepage at http://ijneam.unimap.edu.my/|
|ISSN: ||1985-5761 (Printed)|
|Appears in Collections:||International Journal of Nanoelectronics and Materials (IJNeaM)|
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