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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49270

Title: Reactive PLD of ZnO thin film for optoelectronic application
Authors: Salem, Evan T.
Ismail, Raid A.
Fakhry, Makaram A.
Yusof, Yushamdan
Keywords: TCO thin film;MIS device;PLD deposition;Electrical properties
Issue Date: 2016
Publisher: Universiti Malaysia Perlis
Citation: International Journal of Nanoelectronics and Materials, vol.9, 2016, pages 111-122
Abstract: ZnO/Si heterostracture has been constructed on (111) oriented silicon substrate using a pulsed Nd: YAG laser for the ablation of Zn target in the presence of oxygen as reactive atmosphere in order to prepare ZnO TCO's films. Were the electrical properties of these films have been invested reaching to the optimum oxygen pressure at which the device has been prepared. ZnO films, formed at 300 Torr oxygen ambient, showed an electrical resistivity of 0.27 cm, without using post-deposition heat treatment. The electrical properties of the preparation device have been carried out at different substrate temperatures. Also the detector parameter has been measured
Description: Link to publisher's homepage at http://ijneam.unimap.edu.my/
URI: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49270
ISSN: 1985-5761 (Printed)
1997-4434 (Online)
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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