|
iRepository at Perpustakaan UniMAP >
JOURNAL ARTICLES >
International Journal of Nanoelectronics and Materials >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/123456789/2374
|
| Title: | Studying the effect of X-ray radiation on the electrical properties of diodes 1N1405 |
| Authors: | Najim, Jassim M. |
| Keywords: | X-rays
Electrical properties
Semiconductors
Silicon
Electromagnetic waves |
| Issue Date: | 2008 |
| Publisher: | Universiti Malaysia Perlis |
| Citation: | International Journal of Nanoelectronics and Materials, vol. 1 (1), 2008, pages 35-39. |
| Abstract: | The diode 1N1405 type silicon is subjected to different levels of energy and time
irradiation. We have about three times; at every time we have measured the forward and
reverse bias voltage of the diode to know what is the difference between the electrical
properties of the same diode without irradiation of x-ray. |
| Description: | Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008. |
| URI: | http://www.unimap.edu.my
http://hdl.handle.net/123456789/2374 |
| ISSN: | 1985-5761 (Printed)
1997-4434 (Online) |
| Appears in Collections: | International Journal of Nanoelectronics and Materials
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
