iRepository at Perpustakaan UniMAP >
Journal Articles >
International Journal of Nanoelectronics and Materials (IJNeaM) >

Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/2374

Title: Studying the effect of X-ray radiation on the electrical properties of diodes 1N1405
Authors: Najim, Jassim M.
Keywords: X-rays;Electrical properties;Semiconductors;Silicon;Electromagnetic waves
Issue Date: 2008
Publisher: Universiti Malaysia Perlis
Citation: International Journal of Nanoelectronics and Materials, vol. 1 (1), 2008, pages 35-39.
Abstract: The diode 1N1405 type silicon is subjected to different levels of energy and time irradiation. We have about three times; at every time we have measured the forward and reverse bias voltage of the diode to know what is the difference between the electrical properties of the same diode without irradiation of x-ray.
Description: Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008.
URI: http://www.unimap.edu.my
ISSN: 1985-5761 (Printed)
1997-4434 (Online)
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

Files in This Item:

File Description SizeFormat
Studying the effect of X-ray.pdf210.29 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Valid XHTML 1.0! Perpustakaan Tuanku syed Faizuddin Putra, Kampus Pauh Putra, Universiti Malaysia Perlis, 02600, Arau Perlis
TEL: +604-9885420 | FAX: +604-9885405 | EMAIL: rujukan@unimap.edu.my Feedback