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|Title: ||Application of e-beam lithography for nanowire development|
|Authors: ||S. Fatimah, Abd Rahman|
Uda, Hashim, Prof. Dr.
Mohammad Nuzaihan, Md Nor
|Keywords: ||Semiconductor device;Electron beam lithography (EBL);Photolithography;Nanowires|
|Issue Date: ||16-Oct-2010|
|Publisher: ||Universiti Malaysia Perlis (UniMAP)|
|???metadata.dc.publisher.department???: ||Centre for Graduate Studies|
|Series/Report no.: ||Proceedings of the International Postgraduate Conference on Engineering (IPCE 2010)|
|Abstract: ||Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly insufficient. In this paper, the recent development of the silicon nanowire based on electron beam lithography technique is reviewed. EBL technology is a best tool to fabricate patterns having nanometer feature sizes. In this project, the exposure process was carried out by an in-house modified electron beam writing system using JOEL JSM 6460LA SEM integrated with ELPHY Quantum pattern generator. Following an introduction of this technique, the software description, pattern design formation and resist development are separately examined and discussed.|
|Description: ||International Postgraduate Conference On Engineering (IPCE 2010), 16th - 17th October 2010 organized by Centre for Graduate Studies, Universiti Malaysia Perlis (UniMAP) at School of Mechatronic Engineering, Pauh Putra Campus, Perlis, Malaysia.|
|Appears in Collections:||Mohammad Nuzaihan Md Nor|
Uda Hashim, Prof. Dr.
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