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|Title: ||High side MOSFET driver design using discrete components for low voltage applications|
|Authors: ||Pungut, Ibrahim|
Ismail, Daut, Prof. Dr.
Soib, Taib, Prof. Madya Dr.
Dina Maizana, Maiz Ahmad
Risnidar Chan Bahaudin, Ir.
|Keywords: ||High-side N-channel MOSFET driver;Metal Oxide Semiconductor Field-Effect Transistor (MOSFET);MOSFET driver|
|Issue Date: ||16-Oct-2010|
|Publisher: ||Universiti Malaysia Perlis (UniMAP)|
|???metadata.dc.publisher.department???: ||Centre for Graduate Studies|
|Series/Report no.: ||Proceedings of the International Postgraduate Conference on Engineering (IPCE 2010)|
|Abstract: ||This paper presents the design of a high-side N-channel MOSFET driver using discrete components for low voltage applications, ranging from 3V up to 24Vdc operation. Special level shifting technique is used to increase the gate voltage higher than the supply voltage. Voltage readings at various points of the driver were also taken for reference. The designed high-side driver was tested to observe its performance with respect to different gate input frequencies, from 50Hz up to 150kHz using the MOSFET IRF730 as the switching device. The results obtained indicate that the driver circuit works well up to frequency of 150kHz where the width ratio found to be more than 72%.|
|Description: ||International Postgraduate Conference On Engineering (IPCE 2010), 16th - 17th October 2010 organized by Centre for Graduate Studies, Universiti Malaysia Perlis (UniMAP) at School of Mechatronic Engineering, Pauh Putra Campus, Perlis, Malaysia.|
|Appears in Collections:||Conference Papers|
Ismail Daut, Prof. Dr.
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