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|Title: ||Microwave FET amplifier stability analysis using Geometrically-derived Stability Factors|
|Authors: ||Syuhaimi, Kassim|
Mohd Fareq, Abd Malek, Dr.
|Keywords: ||μ source μ load|
|Issue Date: ||15-Jun-2010 |
|Publisher: ||Institute of Electrical and Electronics Engineers (IEEE)|
|Citation: ||p. 1-5|
|Series/Report no.: ||Proceedings of the International Conference on Intelligent and Advanced Systems (ICIAS) 2010|
|Abstract: ||In this paper, the concept of stability in the design of microwave amplifier is re-visited. With the help of EDA tools, the determination of the microwave amplifier stability is simplified through the derivation of Geometrically-Derive Source (μ source) and Load (μ load) Stability Factors along with the Rollet Stability Factor (K-Factor). The effects of stabilization elements and layout parasitics i.e. ground inductance towards the amplifier's stability and were discussed. The techniques are then demonstrated with the ATF-50189 E-pHEMT microwave amplifier typical parameters.|
|Description: ||Link to publisher's homepage at http://ieeexplore.ieee.org/|
|Appears in Collections:||Conference Papers|
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