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Title: Fabrication Of 50 µm transistor and AlNiAu interconnection process
Authors: Shaffie Husin
???metadata.dc.contributor.advisor???: Mohd Khairuddin Md Arshad (Advisor)
Keywords: Transistors;Silicon;Negative metal oxide semiconductors (NMOS);Metal Oxide Semiconductor Field Effect Transistor (MOSFET);Transistors -- Design and construction;Silicon oxidation;Transistor circuits
Issue Date: Mar-2007
Publisher: Universiti Malaysia Perlis
???metadata.dc.publisher.department???: School of Microelectronic Engineering
Abstract: Generally process fabrication transistor will starts by cleaning the wafer, formation region drain, D and source, S, get oxide and deposited aluminum as contact with the source, drain and gate. Mask is very important thing to develop the pattern transfer in fabrication process Based on that, the project fabrication transistor not successful because quality of mask not very compatible to develop the smaller size. AlNiAu as the interconnection involved of several steps. It starts with Al deposition, the follow by cleaning, activation and zincation to remove the oxide layer thus, provide good adhesive. The next process is nickel deposition and lastly gold in deposited on top of Ni. Gold is used because of is not easily oxidize upon exposure for environment. Size of bond pad, chemical and temperature during the process and most important is thickness of aluminum, passivation and also photoresist layer, must be determined to achieve consistent result.
URI: http://hdl.handle.net/123456789/1938
Appears in Collections:School of Microelectronic Engineering (FYP)

Files in This Item:

File Description SizeFormat
Abstract, Acknowledgment.pdf311.81 kBAdobe PDFView/Open
Conclusion.pdf34.69 kBAdobe PDFView/Open
Introduction.pdf42.8 kBAdobe PDFView/Open
Literature review.pdf1.13 MBAdobe PDFView/Open
Methodology.pdf869.17 kBAdobe PDFView/Open
References and appendix.pdf44.03 kBAdobe PDFView/Open
Results and discussion.pdf2.49 MBAdobe PDFView/Open
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