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Title: The Effect of Annealing Temperature and Dopant Concentration on the Surface Layer of Vanadium Doped Barium Strontium Titanate (BVST) Thin Film
Authors: Siti Norhaida Abdul Rahman
???metadata.dc.contributor.advisor???: Sanna Taking (Advisor)
Keywords: Vanadium;Chemical solution deposition (CSD);Barium strontium titanate (BST);Vanadium alloys;Titanates;Vanadium oxide doped Barium Strontium Titanate (BVST);Dopant Concentration;BVST thin film
Issue Date: Mar-2007
Publisher: Universiti Malaysia Perlis
???metadata.dc.publisher.department???: School of Microelectronic Engineering
Abstract: Vanadium is classified as a transition metal and is the most important in its group. It finds extensive use in the manufacturing of special steels with exceptional strength and toughness. The dopant concentration of Vanadium oxide doped Barium Strontium Titanate (BVST) thin film were prepared on p-type and n-type substrates using chemical solution deposition(CSD) method of 0%, 5% and 10%. The films were deposited by spin coating method with spinning speed at 3000 rpm for 30 seconds. The post deposition annealing of the films were carried out for one hour using hot plate at 180oC, 200oC, 220oC and 240oC for low temperature and using furnace at 900°C, 950°C and 1000°C for high temperature. The surface roughness, grain size, thickness and thin film type analysis of the grown thin films are characterized by atomic force microscope (AFM), Ambios XP-1 and PNT conduction gauge It is found that the best surface roughness, grain size and grain diameter at high temperature is temperature of 950° with dopant concentration of 5% p-type substrate. The grain size value obtained is 37.35nm², grain diameter value is of 6.896nm and rms roughness value is of 0.384nm. Vanadium doped Barium Strontium Titanate (BVST) is shows larger grain size and smoother surface roughness. It is found then the type of substrates, dopant concentration and annealing temperature will affect the surface roughness, grain size, grain diameter, thickness and thin film type.
Description: Access is limited to UniMAP community.
URI: http://hdl.handle.net/123456789/1367
Appears in Collections:School of Microelectronic Engineering (FYP)

Files in This Item:

File Description SizeFormat
Abstract, Acknowledgment.pdf41.41 kBAdobe PDFView/Open
Conclusion.pdf55.1 kBAdobe PDFView/Open
Introduction.pdf85.73 kBAdobe PDFView/Open
Literature review.pdf109.48 kBAdobe PDFView/Open
Methodology.pdf83.44 kBAdobe PDFView/Open
References and appendix.pdf716.91 kBAdobe PDFView/Open
Result and discussion.pdf8.06 MBAdobe PDFView/Open
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