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Institute of Nano Electronic Engineering (Articles) >

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/13616

Title:	Investigated optical studies of Si quantum dot
Authors:	Y., Al-Douri R., Khenata A.H., Reshak
Keywords:	Optical properties Quantum dot Si
Issue Date:	Sep-2011
Publisher:	Elsevier Ltd.
Citation:	Solar Energy, vol. 85(9), 2011, pages 2283-2287
Abstract:	Further study of the quantum dot potential for Si is presented. This potential has been calculated by means of our recent empirical model. The indirect energy gap (Γ-X) is calculated using the full potential-linearized augmented plane wave (FP-LAPW) method. The Engel-Vosko generalized gradient approximation (EV-GGA) formalism is used to optimize the corresponding potential for energetic transition and optical properties calculations of Si. The refractive index and transverse effective charge are predicted as a function of dot diameter that is in turn used to test the validity of our model. The obtained results show a reasonable agreement in comparison with experimental data and theoretical results.
Description:	Link to publisher's homepage at www.elsevier.com/
URI:	http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6V50-5397D3C-1-6&_cdi=5772&_user=1659113&_pii=S0038092X11002295&_origin=&_coverDate=09%2F30%2F2011&_sk=999149990&view=c&wchp=dGLbVzz-zSkzV&md5=d9c55b7e9229a50948da194ea9efbc23&ie=/sdarticle.pdf http://hdl.handle.net/123456789/13616 10.1016/j.solener.2011.06.017
ISSN:	0038-092X
Appears in Collections:	Institute of Nano Electronic Engineering (Articles)

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