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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/dspace/handle/123456789/13332

Title: Stiffness properties of porous silicon nanowires fabricated by electrochemical and laser-induced etching
Authors: K., Omar
Y., Al-Douri
A., Ramizy
Z., Hassan
Keywords: Chemical etching;Elasticity;Laser-induced etching;Nanowire;Stiffness
Issue Date: Aug-2011
Publisher: Elsevier Ltd.
Citation: Superlattices and Microstructures, Vol. 50(2), 2011, pages 119-127
Abstract: Nanowires with dimensions of few nanometers were formed on the whole etched surface. The optical analysis of silicon nanostructures was studied. Blue shift luminescence was observed at 660 nm for PS produced by electrochemical etching, and at 629 nm for laser-induced etching. PS produced a blue shift at 622 nm using both etching procedures simultaneously. X-ray diffraction (XRD) was used to investigate the crystallites size of PS as well as to provide an estimate of the degree of crystallinty of the etched sample. Refractive index, optical dielectric constant, bulk modulus and elasticity are calculated to investigate the optical and stiffness properties of PS nanowires, respectively. The elastic constants and the short-range force constants of PS are investigated.
Description: Link to publisher's homepage at http://www.elsevier.com/wps/find/homepage.cws_home
URI: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6WXB-52Y2W2P-2-R&_cdi=7154&_user=1659113&_pii=S0749603611000875&_origin=&_coverDate=08%2F31%2F2011&_sk=999499997&view=c&wchp=dGLzVzz-zSkzV&md5=107485a430aa1aa34b9d4b9af37f464c&ie=/sdarticle.pdf
http://hdl.handle.net/123456789/13332
???metadata.dc.identifier.doi???: 10.1016/j.spmi.2011.05.008
ISSN: 0749-6036
Appears in Collections:Institute of Nano Electronic Engineering (Articles)

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