DSpace
 

iRepository at Perpustakaan UniMAP >
Journal Articles >
School of Microelectronic Engineering (Articles) >

Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/dspace/handle/123456789/10768

Title: Structural and electronic properties of bulk GaP and AlP and their (GaP)n / (AlP)n superlattices
Authors: M., Merabet
S., Benalia
D., Rached
A., Bouhemadou
S., Omran
Ali H., Reshak
M., Rabah
Keywords: FP-LMTO;Electronic structure;Superlattices
Issue Date: Feb-2011
Publisher: Elsevier Ltd.
Citation: Superlattices and Microstructures, vol. 49(2), 2011, pages 132-143
Abstract: The structural and the electronic properties of binary GaP and AlP compounds and their superlattices are investigated using the recent version of the first-principles full potential linear muffin-tin orbitals method (FP-LMTO) (Lmtart 7.0). The structural parameters and the pressures at which these compounds undergo structural phase transition from zinc-blende (B3) to the rocksalt (B1) are determined. From the results of the electronic properties we find that the parent materials (GaP, AlP) have indirect bandgaps. The resemblances between GaP and AlP and their small lattice mismatch led us to perform investigations on zinc-blende/zinc-blende for n=1,2 and 3 monolayer. Our calculations performed for band structure and density of state show an indirect band gap superlattices for n=1 and 2 and a direct band gap for n=3. Details of the electronic structure of superlattices are discussed. An excellent agreement was found between our results and those of other theoretical predictions and experimental measurements.
Description: Link to publisher's homepage at www.elsevier.com
URI: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6WXB-51M0N91-2-H&_cdi=7154&_user=1659113&_pii=S0749603610002363&_origin=search&_coverDate=02%2F28%2F2011&_sk=999509997&view=c&wchp=dGLzVzb-zSkzS&md5=e8dac106cd47356fb3893100f4f45747&ie=/sdarticle.pdf
http://hdl.handle.net/123456789/10768
ISSN: 0749-6036
Appears in Collections:School of Microelectronic Engineering (Articles)

Files in This Item:

File Description SizeFormat
Structural and electronic properties of bulk GaP and AlP and their.pdf29.82 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! Perpustakaan Tuanku syed Faizuddin Putra, Kampus Pauh Putra, Universiti Malaysia Perlis, 02600, Arau Perlis
TEL: +604-9885420 | FAX: +604-9885405 | EMAIL: rujukan@unimap.edu.my Feedback