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|Title: ||Design of high-side MOSFET driver using discrete components for 24V operation|
|Authors: ||Rosnazri, Ali|
Ismail, Daut, Prof. Dr.
Noor Shahida, Jamoshid
Abdul Rahim, Abd Razak
|Keywords: ||Bootstrap circuit;Floating mosfet driver;H-bridge inverter design;High-side mosfet driver;Level shifter|
|Issue Date: ||23-Jun-2010|
|Publisher: ||Institute of Electrical and Electronics Engineers (IEEE)|
|Series/Report no.: ||Proccedings of the 4th International Power Engineering and Optimization Conference (PEOCO) 2010|
|Abstract: ||This paper presents the design of a high-side N-channel MOSFET driver using discrete components for 24Vdc operation. Special level shifting technique is used to increase the gate voltage higher than the supply voltage. Voltage readings at various points of the driver were also taken for reference. The designed high-side driver was tested to observe its performance with respect to different gate input frequencies, from 50Hz up to 150kHz using the MOSFET IRF730 as the switching device. The results obtained indicate that the driver circuit works well up to frequency of 150kHz where the width ratio found to be more than 72%.|
|Description: ||Link to publisher's homepage at http://ieeexplore.ieee.org/|
|Appears in Collections:||Conference Papers|
Ismail Daut, Prof. Dr.
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