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| Title: | XRD analyses of InxGa1-xN (0.20 x 0.80) ternary alloys |
| Authors: | Yushamdan, Yusof
Muslim, A. Abid
Ng, Sha Shiong
Haslan, Abu Hassan
Zainuriah, Hassan |
| E-mail: | yushamdan@notes.usm.my
muslim_abid@yahoo.com
shashiong@usm.my
haslan@usm.my
zai@usm.my |
| Keywords: | III-nitrides
Ternary alloy
X-ray diffraction (XRD)
InGaN
International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) |
| Issue Date: | 9-Jun-2010 |
| Publisher: | Universiti Malaysia Perlis |
| Department: | School of Materials Engineering & School of Environmental Engineering |
| Citation: | p.341-343 |
| Series/Report no.: | Proceedings of the International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) 2010 |
| Abstract: | We present the structural properties
of ternary InxGa1-xN (0.20 x 0.80) alloys
grown on sapphire substrate by plasma-assisted
molecular beam epitaxy. High resolution X-ray
diffraction (HR-XRD) analyses were used to
investigate the phase and crystalline quality of
ternary InxGa1-xN. From the XRD phase
analysis, it is confirmed that the films InxGa1-xN
had wurtzite structure and without any phase
separation. In addition, it is found that the
Bragg angle of the (0002) InxGa1-xN peak
gradually decreases as the In compositions
increases, indicating the increases in the lattice
constant c of the InxGa1-xN ternary alloys. Apart
from that, the composition of InxGa1-xN
epilayers is determined by applying the
Vegard’s law. Finally, the variation of the
crystalline quality as a function of In
composition is investigated through the XRD
rocking curve analyses. |
| Description: | International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia. |
| URI: | http://hdl.handle.net/123456789/10157 |
| ISBN: | 978-967-5760-02-0 |
| Appears in Collections: | Conference Papers
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