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Title: XRD analyses of InxGa1-xN (0.20 x 0.80) ternary alloys
Authors: Yushamdan, Yusof
Muslim, A. Abid
Ng, Sha Shiong
Haslan, Abu Hassan
Zainuriah, Hassan
???metadata.dc.contributor.url???: yushamdan@notes.usm.my
Keywords: III-nitrides;Ternary alloy;X-ray diffraction (XRD);InGaN;International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
Issue Date: 9-Jun-2010
Publisher: Universiti Malaysia Perlis
???metadata.dc.publisher.department???: School of Materials Engineering & School of Environmental Engineering
Citation: p.341-343
Series/Report no.: Proceedings of the International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) 2010
Abstract: We present the structural properties of ternary InxGa1-xN (0.20 x 0.80) alloys grown on sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction (HR-XRD) analyses were used to investigate the phase and crystalline quality of ternary InxGa1-xN. From the XRD phase analysis, it is confirmed that the films InxGa1-xN had wurtzite structure and without any phase separation. In addition, it is found that the Bragg angle of the (0002) InxGa1-xN peak gradually decreases as the In compositions increases, indicating the increases in the lattice constant c of the InxGa1-xN ternary alloys. Apart from that, the composition of InxGa1-xN epilayers is determined by applying the Vegard’s law. Finally, the variation of the crystalline quality as a function of In composition is investigated through the XRD rocking curve analyses.
Description: International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.
URI: http://hdl.handle.net/123456789/10157
ISBN: 978-967-5760-02-0
Appears in Collections:Conference Papers

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