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    • Virtual fabrication of 14nm gate length n-Type double gate MOSFET 

      N. H. N. M. Nizam; F. Salehuddin; K. E. Kaharudin; Noor Faizah Z. A (Universiti Malaysia Perlis (UniMAP), 2023-01)
      Due to Moore's law, it is that predicted the channel length of a metal-oxide-semiconductor Field Effect Transistor (MOSFET) will tend to shrink from the submicron to the nanoscale size. Thus, precision in the manufacturing ...