Now showing items 1-3 of 3

    • Effect Irradiation time of Gamma Ray on MSISM (Au/SnO₂/SiO₂/Si/Al) devices using theoretical modeling 

      Hassan, Marwa Abdul Muhsien; Al-Kadhemy, Mahasin F. Hadi; Salem, Evan T. (Universiti Malaysia Perlis, 2015)
      An experimental and theoretical analysis of the effect of irradiation time to Gamma ray on the SnO₂/n-Si hetero-junction devices have been carried out. The time of exposure to Gamma ray was taken as (t= 0, 50, 100, and 150 ...
    • Metal oxide nanoparticles suspension for optoelectronic devices fabrication 

      Salem, Evan T.; Fakhry, Makram A.; Hassen, Hala (Universiti Malaysia Perlis, 2013)
      In the present work, simple and single step method has been used to prepare metal oxide Nanoparticles suspension, this done by laser ablation of pure metal in liquid, While direct spraying of the prepared of the prepared ...
    • Reactive PLD of ZnO thin film for optoelectronic application 

      Salem, Evan T.; Ismail, Raid A.; Fakhry, Makaram A.; Yusof, Yushamdan (Universiti Malaysia Perlis, 2016)
      ZnO/Si heterostracture has been constructed on (111) oriented silicon substrate using a pulsed Nd: YAG laser for the ablation of Zn target in the presence of oxygen as reactive atmosphere in order to prepare ZnO TCO's ...