Browsing by Author "E., K. Ng"
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Technical barriers and development of Cu wirebonding in nanoelectronics device packaging
C., L. Gan; E., K. Ng; B., L. Chan; Uda, Hashim, Prof. Dr.; F., C. Classe (Hindawi Publishing Corporation, 2012)Bondpad cratering, Cu ball bond interface corrosion, IMD (intermetal dielectric) cracking, and uncontrolled post-wirebond staging are the key technical barriers in Cu wire development. This paper discusses the UHAST (unbiased ... -
Wearout reliability and intermetallic compound diffusion kinetics of Au and PdCu wires used in nanoscale device packaging
Chong, Leong Gan; E., K. Ng; Bak, Lee Chan; Classe, Francis; Kwuanjai, T.; Uda, Hashim, Prof. Dr. (Hindawi Publishing Corporation, 2013)Wearout reliability and diffusion kinetics of Au and Pd-coated Cu (PdCu) ball bonds are useful technical information for Cu wire deployment in nanoscale semiconductor device packaging. This paper discusses the HAST (with ...